Title :
Wide Emission Spectra from Multi-stack InGaAs Quantum Dots
Author :
Tzeng, T.E. ; Feng, D.J.Y. ; Lay, T.S. ; Chang, T.Y.
Author_Institution :
Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
Multi-layer InGaAs quantum dots have been grown and investigated to have 165 nm broad-band emission at lambda=1300 nm by tailoring the In and Ga compositions for the dots and caps in the stacked layers.
Keywords :
III-V semiconductors; atomic force microscopy; electroluminescence; gallium arsenide; indium compounds; multilayers; photoluminescence; semiconductor quantum dots; AFM; DWELL structure; EL emission spectra; InGaAs; broad-band emission; electroluminescence; multistack quantum dots; photoluminescence spectra; stacked layers; wavelength 1300 nm; wavelength 165 nm; wide emission spectra; Atomic force microscopy; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Light emitting diodes; Optical buffering; Quantum dots; Stimulated emission; Substrates; Superluminescent diodes;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381155
