Title :
N-type Modulation-Doped InGaAlAs/InP Strain-Balanced Quantum-Well SOA/Laser Fabricated by a Multi-Step Wet-Etching Process
Author :
Feng, David J Y ; Chiu, C.L. ; Chen, J.D. ; Lai, C.M. ; Lay, T.S. ; Chang, T.Y.
Author_Institution :
Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
We report the design and MBE growth of strain-balanced epitaxial structures on InP containing n-type modulation-doped InGaAlAs/InGaAs quantum wells and a new multi-step wet-etching process for laser fabrication.
Keywords :
aluminium compounds; doping; gallium arsenide; indium compounds; laser beam etching; molecular beam epitaxial growth; optical fabrication; optical modulation; quantum well lasers; semiconductor optical amplifiers; MBE growth; SOA-laser fabrication; molecular beam epitaxy; multistep wet-etching process; n-type modulation-doped InGaAlAs-InGaAs quantum wells; semiconductor-optical-amplifier; strain-balanced epitaxial structure; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical design; Optical device fabrication; Optical materials; Optical waveguides; Quantum well lasers; Semiconductor optical amplifiers;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381160
