• DocumentCode
    2978018
  • Title

    Quantum Well Intermixing in InGaAs/InGaAlAs Structures by Using ICP-RIE and SiO2 Sputtering

  • Author

    Chang, H.J. ; Lin, E.Y. ; Chuang, K.Y. ; Chiu, C.L. ; Lay, T.S. ; Chang, T.Y.

  • Author_Institution
    Nat. Sun Yat-Sen Univ., Kaohsiung
  • fYear
    2007
  • fDate
    14-18 May 2007
  • Firstpage
    215
  • Lastpage
    217
  • Abstract
    A quantum well intermixing process combining ICP-RIE and SiO2 sputtering was investigated for the InGaAs/InGaAlAs multi-quantum wells. Optimal conditions including ICP-RIE etching depth, SiO2 deposition, and RTA process were obtained for a 60-nm blueshift.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; rapid thermal annealing; semiconductor quantum wells; silicon compounds; spectral line shift; sputter etching; ICP-RIE etching; InGaAs-InGaAlAs; RTA process; SiO2; inductively coupled plasma; multiquantum well intermixing structure; rapid thermal annealing; sputtering; Atomic layer deposition; Indium gallium arsenide; Indium phosphide; Photonic band gap; Plasma applications; Plasma materials processing; Plasma temperature; Rapid thermal annealing; Sputter etching; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
  • Conference_Location
    Matsue
  • ISSN
    1092-8669
  • Print_ISBN
    1-4244-0875-X
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2007.381161
  • Filename
    4265918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2978018