Title :
N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks
Author :
Orpella, A. ; Blanqué, S. ; Roiati, V. ; Martín, I. ; Voz, C. ; Puigdollers, J. ; Alcubilla, R.
Author_Institution :
Grupo de Micro y Nanotecnologias MNT, Univ. Politec. de Catalunya, Barcelona
Abstract :
This paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this technique, emitter saturation current density can be decreased to values around 250 fA middot cm-2. As a consequence, open circuit voltages can be increased 25 mV achieving values around 640 mV.
Keywords :
current density; elemental semiconductors; hydrogen; passivation; phosphorus; plasma CVD; silicon; silicon compounds; solar cells; N-type emitter passivation; Si; SiCxNy:H,P; amorphous silicon carbonitride layers; antireflective phosphorus doped stacks; emitter saturation current density; open circuit voltages; plasma enhanced chemical vapor deposition; stack configuration; textured deep silicon emitters; Amorphous silicon; Chemical industry; Chemical vapor deposition; Circuits; Current density; Passivation; Plasma applications; Plasma chemistry; Plasma density; Voltage;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800506
