Title :
Low Residual Stress and High Repeatability of SiNX Thin Films for InP-based Optoelectronic Device Fabrication by Dual Radio Frequency Plasma Enhanced Chemical Vapor Deposition
Author :
Song, Yu ; Xiong, Bing ; Sun, Changzheng ; Luo, Yi
Author_Institution :
Tsinghua Univ., Beijing
Abstract :
Low residual stress and high repeatability of plasma enhanced chemical vapor deposited SiNx thin films were obtained by optimizing dual radio frequency power source and eliminating influence of dielectric films formerly deposited on chamber wall.
Keywords :
III-V semiconductors; dielectric thin films; indium compounds; internal stresses; optoelectronic devices; plasma CVD coatings; semiconductor thin films; silicon compounds; wide band gap semiconductors; PECVD; chamber wall; dielectric films; dual radio frequency plasma enhanced chemical vapor deposition; high-repeatability thin films; optoelectronic device fabrication; plasma enhanced chemical vapor deposition; residual stress; Chemical vapor deposition; Dielectric thin films; Optical device fabrication; Optoelectronic devices; Plasma chemistry; Plasma devices; Radio frequency; Residual stresses; Sputtering; Thin film devices;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381166
