DocumentCode
2978155
Title
Tunable Near Infra Red InP / InGaAs QWs Based Photodetector Integrated in a MOEMS Structure for the Realisation of a Micro-Spectrometer
Author
Parillaud, O. ; Garrigues, M. ; Leclercq, J.-L. ; Gil-Sobraques, R. ; Crochon, M. ; Roger, J.-M. ; Amore, O. ; Vilotich, B.
Author_Institution
Alcatel Thales III-V lab, Palaiseau
fYear
2007
fDate
14-18 May 2007
Firstpage
237
Lastpage
240
Abstract
This paper deals with the design and realisation of a Near Infra-Red (NIR) micro-spectrometer (1.5 to 2 mum) for non invasive detection. The device is based on an InGaAs strained QWs photodiode integrated in a MOEMS structure for wavelength tunability. We address two main challenges which are the realisation of a long wavelength photodetector combined with the fabrication of a micro-machined tunable air-gap cavity resonator. We present first the design and process critical issues related to the residual strain management in the structure. The InGaAs QW growth aspects are presented. We also describe an example of a system for the monitoring of the sugar concentration in water which has been chosen to validate the concept.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared spectrometers; micro-optomechanical devices; photodetectors; photodiodes; InP-InGaAs; MOEMS; microspectrometer; photodetector; photodiode; strain management; sugar concentration monitoring; tunable near infrared QW; wavelength 1.5 mum to 2 mum; wavelength tunability; Air gaps; Capacitive sensors; Cavity resonators; Fabrication; Indium gallium arsenide; Indium phosphide; Infrared detectors; Photodetectors; Photodiodes; Process design;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381167
Filename
4265924
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