DocumentCode
2978200
Title
Proton Radiation Effects in High-Power GaInP/AlGaInP Semiconductor Lasers
Author
Gonda, Shun-ichi ; Tsutsumi, Hiroyuki ; Ito, Yoshifumi ; Kume, Kyo ; Ishigami, Ryoya ; Makino, Takamitsu ; Morita, Takenori ; Kan, Hirofumi
Author_Institution
Fukui Univ. of Technol., Fukui
fYear
2007
fDate
14-18 May 2007
Firstpage
245
Lastpage
248
Abstract
High-power GalnP/AlGalnP broad-stripe lasers were irradiated with 200- and 10-MeV protons. The normalized threshold current linearly increases with increasing proton fluence. In GalnP lasers smaller increase in the threshold current was observed compared with high-power AlGaAs lasers. Proton energy dependence of the threshold current damage factor and forward bias annealing are discussed.
Keywords
III-V semiconductors; aluminium compounds; annealing; gallium compounds; indium compounds; proton effects; semiconductor lasers; aluminium compounds; gallium compounds; indium compounds; proton radiation effects; semiconductor lasers; threshold current linearly; Electrodes; Gallium arsenide; Indium phosphide; Ionization chambers; Optical materials; Particle beams; Proton radiation effects; Semiconductor lasers; Surface emitting lasers; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381169
Filename
4265926
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