Title :
Proton Radiation Effects in High-Power GaInP/AlGaInP Semiconductor Lasers
Author :
Gonda, Shun-ichi ; Tsutsumi, Hiroyuki ; Ito, Yoshifumi ; Kume, Kyo ; Ishigami, Ryoya ; Makino, Takamitsu ; Morita, Takenori ; Kan, Hirofumi
Author_Institution :
Fukui Univ. of Technol., Fukui
Abstract :
High-power GalnP/AlGalnP broad-stripe lasers were irradiated with 200- and 10-MeV protons. The normalized threshold current linearly increases with increasing proton fluence. In GalnP lasers smaller increase in the threshold current was observed compared with high-power AlGaAs lasers. Proton energy dependence of the threshold current damage factor and forward bias annealing are discussed.
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium compounds; indium compounds; proton effects; semiconductor lasers; aluminium compounds; gallium compounds; indium compounds; proton radiation effects; semiconductor lasers; threshold current linearly; Electrodes; Gallium arsenide; Indium phosphide; Ionization chambers; Optical materials; Particle beams; Proton radiation effects; Semiconductor lasers; Surface emitting lasers; Threshold current;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381169
