DocumentCode
2978209
Title
Laser scribing of very large 2,6m x 2,2m a-Si: H thin film photovoltaic modules.
Author
Borrajo, J.P. ; Vetter, M. ; Andreu, J.
Author_Institution
Dept. Technol., Dev. & Innovation, Parq. Tecnol. de Galicia, Vigo
fYear
2009
fDate
11-13 Feb. 2009
Firstpage
402
Lastpage
405
Abstract
Laser scribing for thin-film photovoltaic cells is the technique of choice to obtain monolithic series connection and high throughputs in the industrial production scale of amorphous silicon solar modules. The characterization of laser scribes is presented. This paper is focused on P1 and P2 laser scribing processes which allow the isolation of the front contact belonging to consecutive cells and the interconnection between front transparent conductive oxide and back metallic layers, respectively. Several laser scribing parameters have been checked to obtain successfully an optimized value for both P1 isolation and P2 contact resistance.
Keywords
amorphous semiconductors; contact resistance; elemental semiconductors; hydrogen; laser beam applications; modules; silicon; solar cells; thin film devices; Si:H; amorphous silicon solar modules; contact resistance; interconnection; laser scribing; monolithic series connection; thin film photovoltaic modules; thin-film photovoltaic cells; Amorphous silicon; Coatings; Laser ablation; Photovoltaic cells; Photovoltaic systems; Production facilities; Solar power generation; Substrates; Throughput; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location
Santiago de Compostela
Print_ISBN
978-1-4244-2838-0
Electronic_ISBN
978-1-4244-2839-7
Type
conf
DOI
10.1109/SCED.2009.4800518
Filename
4800518
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