40 Gbps Electroabsorption Modulated DFB Laser with Tilted Facet Formed by Dry Etching

Author

Choe, Joong-Seon ; Kwon, Yong-Hwan ; Sim, Jae-Sik ; Kim, Sung-Bok ; Lee, Myung-Hyun

Author_Institution

Electron. & Telecommun. Res. Inst., Daejeon

fYear

2007

fDate

14-18 May 2007

Firstpage

267

Lastpage

270

Abstract

We fabricated electroabsorption modulated distributed feedback (DFB) laser diodes for 40 Gbps application through selective-area growth method. The facet reflection was not sufficiently removed by just depositing anti-reflection coating on the as-cleaved facet and low frequency resonance occurred by optical feedback from facet to DFB laser. Tilted facet formed by dry etching processes successfully reduced the optical feedback and the resonance in E/O response decreased to as small as 2.8 dB.

Keywords

antireflection coatings; distributed feedback lasers; electro-optical modulation; electroabsorption; etching; laser feedback; semiconductor lasers; antireflection coating; bit rate 40 Gbit/s; distributed feedback laser diodes; dry etching; electro absorption modulated DFB laser; optical feedback; selective-area growth method; tilted facet reflection; Chirp modulation; Dry etching; Fiber lasers; Laser feedback; Optical buffering; Optical coupling; Optical feedback; Optical modulation; Optical waveguides; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381175

Filename

4265932