DocumentCode
2978314
Title
Silicon Microcantilevers with Piezoresistive and MSE Detection
Author
Tosolini, Giordano ; Villanueva, Guillermo ; Bausells, Joan
Author_Institution
IMB-CNM (CSIC), Inst. de Microelectron. de Barcelona, Barcelona
fYear
2009
fDate
11-13 Feb. 2009
Firstpage
428
Lastpage
431
Abstract
We have fabricated 340 nm thick U-shaped microcantilevers with electrical output to be used as sensors for biomolecular detection, which requires a force resolution better than 100 pN. Piezoresistors or MOS transistors have been used as integrated electromechanical transducers. The devices have been fabricated by N-type doping using As ion implantation to obtain shallow junctions, and have been oriented on the (100) crystallographic direction (45deg from the wafer flat) to maximize piezoresistance. Both types of cantilevers have been successfully fabricated. The integrated MOSFETs have shown good conduction characteristics. We report an (amplified) force sensitivity of 60 muV/pN for piezoresistive cantilevers 250 mum long and 8 mum wide.
Keywords
MOSFET; arsenic; bioMEMS; biochemistry; biosensors; cantilevers; ion implantation; microsensors; molecular biophysics; piezoresistive devices; semiconductor doping; silicon; As; MOSFET detection; N-type doping; Si; U-shaped microcantilever; biomolecular detection; biomolecular sensor; force resolution; force sensitivity; integrated electromechanical transducer; ion implantation; piezoresistive cantilever; piezoresistive detection; silicon microcantilever; size 250 mum; size 340 nm; size 8 mum; Biosensors; Doping; Electromechanical sensors; Force sensors; Ion implantation; MOSFETs; Piezoresistance; Piezoresistive devices; Silicon; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location
Santiago de Compostela
Print_ISBN
978-1-4244-2838-0
Electronic_ISBN
978-1-4244-2839-7
Type
conf
DOI
10.1109/SCED.2009.4800525
Filename
4800525
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