DocumentCode :
2978314
Title :
Silicon Microcantilevers with Piezoresistive and MSE Detection
Author :
Tosolini, Giordano ; Villanueva, Guillermo ; Bausells, Joan
Author_Institution :
IMB-CNM (CSIC), Inst. de Microelectron. de Barcelona, Barcelona
fYear :
2009
fDate :
11-13 Feb. 2009
Firstpage :
428
Lastpage :
431
Abstract :
We have fabricated 340 nm thick U-shaped microcantilevers with electrical output to be used as sensors for biomolecular detection, which requires a force resolution better than 100 pN. Piezoresistors or MOS transistors have been used as integrated electromechanical transducers. The devices have been fabricated by N-type doping using As ion implantation to obtain shallow junctions, and have been oriented on the (100) crystallographic direction (45deg from the wafer flat) to maximize piezoresistance. Both types of cantilevers have been successfully fabricated. The integrated MOSFETs have shown good conduction characteristics. We report an (amplified) force sensitivity of 60 muV/pN for piezoresistive cantilevers 250 mum long and 8 mum wide.
Keywords :
MOSFET; arsenic; bioMEMS; biochemistry; biosensors; cantilevers; ion implantation; microsensors; molecular biophysics; piezoresistive devices; semiconductor doping; silicon; As; MOSFET detection; N-type doping; Si; U-shaped microcantilever; biomolecular detection; biomolecular sensor; force resolution; force sensitivity; integrated electromechanical transducer; ion implantation; piezoresistive cantilever; piezoresistive detection; silicon microcantilever; size 250 mum; size 340 nm; size 8 mum; Biosensors; Doping; Electromechanical sensors; Force sensors; Ion implantation; MOSFETs; Piezoresistance; Piezoresistive devices; Silicon; Transducers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
Type :
conf
DOI :
10.1109/SCED.2009.4800525
Filename :
4800525
Link To Document :
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