InP-Based Avalanche Photodiodes with ≫ 2.1μm Detection Capability

Author

Goh, Y.L. ; Ng, J.S. ; Tan, C.H. ; David, J.P.R. ; Sidhu, R. ; Holmes, A.L., Jr. ; Campbell, J.C.

Author_Institution

Sheffield Univ., Sheffield

fYear

2007

fDate

14-18 May 2007

Firstpage

293

Lastpage

295

Abstract

Type-II superlattice formed by In_0.53Ga_0.47As/GaAs_0.51Sb_0.49 wafers have been grown on InP substrates. The superlattice is studied in several aspects to explore its potential in achieving ≫2.1μm detection InP-based avalanche photodiodes. The ionisation coefficients of the superlattice In_0.53 Ga_0.47As(5nm) /GaAs_0.47Sb_0.49 (5nm) are found to be similar to those of In_0.53 Ga_0.47 As. Hence the more compatible avalanche material is InAlAs for low excess noise performance. In addition photoluminescence data indicated that the detection wavelength of these superlattice can be longer by modifying the superlattice combination, while maintaining lattice-matched to InP.

Keywords

avalanche photodiodes; gallium arsenide; indium compounds; photoluminescence; InP-In_0.53Ga_0.47As-GaAs_0.51Sb_0.49; avalanche photodiodes; detection wavelength; ionisation coefficients; noise performance; photoluminescence data; Avalanche photodiodes; Cooling; Dark current; Diodes; Indium compounds; Indium phosphide; Ionization; Remote monitoring; Superlattices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0874-1

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381181

Filename

4265938