Temperature Dependence of InP-Based Avalanche Photodiodes

Author

Ong, D.S.G. ; Ng, J.S. ; Tan, L.J.J. ; Tan, C.H. ; David, J.P.R.

Author_Institution

Univ. of Sheffield, Sheffield

fYear

2007

fDate

14-18 May 2007

Firstpage

296

Lastpage

298

Abstract

The temperature dependence of avalanche breakdown voltage of InP-based separate absorption multiplication avalanche photodiodes (SAM APDs) was investigated for the first time. The work investigated APDs with InGaAs absorber and InP or InAlAs multiplication region. Effects of SAM APD design parameters such as absorber width, multiplication region width, and electrical file profile on the avalanche breakdown voltage temperature dependence were studied. We also investigated the influence of multiplication region material (InP versus InAlAs) on temperature dependence of SAM APDs.

Keywords

III-V semiconductors; aluminium compounds; avalanche breakdown; avalanche photodiodes; gallium arsenide; indium compounds; optical design techniques; thermo-optical effects; APD design parameters; InGaAs-InAlAs; InGaAs-InP; absorber width; avalanche breakdown voltage; electrical file profile; multiplication region material; multiplication region width; separate absorption multiplication avalanche photodiodes; temperature dependency; Avalanche breakdown; Avalanche photodiodes; Breakdown voltage; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical materials; Signal to noise ratio; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381182

Filename

4265939