Title :
Design and Fabrication of 3.3 kV IGBTs for Traction Applications
Author :
Flores, D. ; Hidalgo, S. ; Rebollo, J. ; Caramel, C. ; Sanchez, Jose L. ; Austin, P. ; Imbernon, E.
Author_Institution :
Centra Nac. de Microelectron. IMB-CNM-CSIC, Bellaterra
Abstract :
The paper deals with design and fabrication of monolithically integrated over-voltage sensors with 3.3 kV IGBTs for traction applications. The sensor concept is introduced, and experimental validation on 600 V IGBTs is presented. Guidelines for the design of a 3.3 kV IGBT including voltage and current sensors are provided together with its process fabrication.
Keywords :
electric sensing devices; insulated gate bipolar transistors; integrated circuit design; monolithic integrated circuits; overvoltage; power integrated circuits; traction; IGBT design; current sensor; electric traction system; insulated gate bipolar transistor fabrication; monolithically integrated over-voltage sensor; voltage 3.3 kV; voltage 600 V; Anodes; Breakdown voltage; Cathodes; Electron devices; Fabrication; Guidelines; Insulated gate bipolar transistors; Multichip modules; Semiconductor diodes; Substrates;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800532
