DocumentCode
2978448
Title
Post-Annealing Effects on Emission Characteristics of InAs Quantum Dots on GaNAs Buffer Layer
Author
Suzuki, R. ; Miyamoto, T. ; Koyama, F.
Author_Institution
Tokyo Inst. of Technol., Yokohama
fYear
2007
fDate
14-18 May 2007
Firstpage
307
Lastpage
310
Abstract
Thermal annealing effects on PL characteristics of MOCVD grown InAs QD on GaNAs buffer layers were investigated. By using GaNAs buffer, the suppression of PL intensity degradation due to the crystalline improvement of GaNAs was observed.
Keywords
III-V semiconductors; MOCVD; annealing; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; GaNAs; InAs; MOCVD growth; thermal annealing effects; Buffer layers; Crystallization; Degradation; Gallium arsenide; Light sources; MOCVD; Quantum dots; Rapid thermal annealing; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381185
Filename
4265942
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