Monte Carlo analysis of thermal effects in GaN HEMTs

Author

Mateos, J. ; Pérez, S. ; Pardo, D. ; González, T.

Author_Institution

Appl. Phys. Dept., Univ. de Salamanca, Salamanca

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

459

Lastpage

462

Abstract

By means of a semi-classical Monte Carlo simulator with a consistent self-heating model we have analyzed how the static DC characteristics of GaN HEMTs are modified with respect to the constant room temperature model. The main consequence of the heating of the devices is a decrease of the drain conductance, mainly when the dissipated power is high (high V_DS and V_GS). Regarding the dynamic SSEC parameters, both C_gs and gm decrease when increasing T, thus reducing the intrinsic cutoff frequency of the transistors.

Keywords

III-V semiconductors; Monte Carlo methods; gallium compounds; high electron mobility transistors; semiconductor device reliability; thermal analysis; GaN; HEMT static DC characteristics; constant room temperature model; drain conductance; dynamic SSEC parameters; high electron mobility transistor; semiclassical Monte Carlo simulator; semiconductor device heating; temperature 293 K to 298 K; thermal effects; transistor intrinsic cutoff frequency; Aluminum gallium nitride; Electrons; Gallium nitride; HEMTs; MODFETs; Monte Carlo methods; Optical scattering; Photonic band gap; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800533

Filename

4800533