• DocumentCode
    2978478
  • Title

    Desorption Time of As Adsorbed on GaInAs Surface Analyzed by X-ray CTR Scattering

  • Author

    Mori, A. ; Ohtake, Y. ; Ujihara, T. ; Tabuchi, M. ; Takeda, Y.

  • Author_Institution
    Nagoya Univ., Nagoya
  • fYear
    2007
  • fDate
    14-18 May 2007
  • Firstpage
    315
  • Lastpage
    318
  • Abstract
    Compositional grading at hetero-interfaces in InP/Ga0.47In0.53As/InP structures was investigated utilizing X-ray CTR (crystal truncation rod) scattering method. InP/ Ga0.47In0.53As/InP structures were grown on InP(001) substrate by OMVPE (organometallic vapor phase epitaxy). TBAs-, H2-, and TBP-flushing were carried out with various flushing times after the growth of the GaInAs layers. The CTR analysis showed the desorption lifetimes of As in TBAs, H2, and TBP atmosphere are about 23, 22, and 6 s, respectively.
  • Keywords
    III-V semiconductors; adsorption; desorption; gallium arsenide; indium compounds; vapour phase epitaxial growth; InP-Ga0.47In0.53As; X-ray CTR Scattering; adsorption; compositional grading; desorption lifetimes; desorption time; organometallic vapor phase epitaxy; Atmosphere; Atomic layer deposition; Atomic measurements; Epitaxial growth; HEMTs; Hydrogen; Indium phosphide; MODFETs; Substrates; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
  • Conference_Location
    Matsue
  • ISSN
    1092-8669
  • Print_ISBN
    1-4244-0875-X
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2007.381187
  • Filename
    4265944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2978478