Title :
Effects of Zn- and S-Doping on Kinetics of GaAs Selective Area MOVPE
Author :
Song, Haizheng ; Yunpeng Wang ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Shimogaki, Y.
Author_Institution :
Univ. of Tokyo, Tokyo
Abstract :
The effects of Zn- and S-doping on surface reaction kinetics of GaAs selective area MOVPE have been examined at 650degC. The surface reaction rate constant of GaAs was extracted at various dopant input pressure and different mask width. The dopant atomic concentration in the epilayer was measured as functions of growth rate and mask pattern. These results show strong dependency on the doping behavior and thermodynamics.
Keywords :
III-V semiconductors; MOCVD; doping profiles; gallium arsenide; masks; reaction rate constants; sulphur; surface chemistry; thermodynamics; vapour phase epitaxial growth; zinc; GaAs selective area MOVPE; GaAs:S; GaAs:Zn; S-doping effects; Zn-doping effects; dopant atomic concentration; dopant pressure; doping behavior; mask pattern; mask width; surface reaction kinetics; surface reaction rate constant; temperature 650 C; thermodynamics; Atomic measurements; Dielectric substrates; Epitaxial growth; Epitaxial layers; Gallium arsenide; Hydrogen; Indium phosphide; Kinetic theory; Materials science and technology; Photonic band gap;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381188
