Effects of Zn- and S-Doping on Kinetics of GaAs Selective Area MOVPE

Author

Song, Haizheng ; Yunpeng Wang ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Shimogaki, Y.

Author_Institution

Univ. of Tokyo, Tokyo

fYear

2007

fDate

14-18 May 2007

Firstpage

319

Lastpage

322

Abstract

The effects of Zn- and S-doping on surface reaction kinetics of GaAs selective area MOVPE have been examined at 650degC. The surface reaction rate constant of GaAs was extracted at various dopant input pressure and different mask width. The dopant atomic concentration in the epilayer was measured as functions of growth rate and mask pattern. These results show strong dependency on the doping behavior and thermodynamics.

Keywords

III-V semiconductors; MOCVD; doping profiles; gallium arsenide; masks; reaction rate constants; sulphur; surface chemistry; thermodynamics; vapour phase epitaxial growth; zinc; GaAs selective area MOVPE; GaAs:S; GaAs:Zn; S-doping effects; Zn-doping effects; dopant atomic concentration; dopant pressure; doping behavior; mask pattern; mask width; surface reaction kinetics; surface reaction rate constant; temperature 650 C; thermodynamics; Atomic measurements; Dielectric substrates; Epitaxial growth; Epitaxial layers; Gallium arsenide; Hydrogen; Indium phosphide; Kinetic theory; Materials science and technology; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381188

Filename

4265945