Quinary TlGaInNAs DQW Structures: Effect of Growth Temperature and Growth Rate on Tl Incorporation

TIGalnNAs-based DQW structures grown at various growth parameters were studied by secondary ion mass spectroscopy (SIMS). Enhanced Tl incorporation could be obtained using TlGaNAs barriers. A direct relationship between the Tl incorporation and N composition is clearly established by the analysis of the effect of growth temperature, growth rate, ECR power and nitrogen flow rate. The Tl incorporation increased with the increase of Tl flux in the case of DQW structures with TlGaAs barriers. In the case of DQW structures with TIGaNAs barriers, the Tl incorporation reached saturation at some Tl flux, indicating the N enhanced higher Tl incorporation.