• DocumentCode
    2978591
  • Title

    Growth of Platy InGaAs Single Crystals and Fabrication of 1.3 μm Laser Diodes

  • Author

    Kinoshita, K. ; Ueda, T. ; Adachi, S. ; Masaki, T. ; Yoda, S. ; Arai, M. ; Watanabe, T. ; Yuda, M. ; Kondo, Y.

  • Author_Institution
    Japan Aerosp. Exploration Agency, Tsukuba
  • fYear
    2007
  • fDate
    14-18 May 2007
  • Firstpage
    339
  • Lastpage
    342
  • Abstract
    High quality InxGa1-xAs platy single crystals (x: 0.1 -0.2) were grown by the newly invented growth method named as the traveling liquidus-zone (TLZ) method. Laser diodes lasing at 1.3 μm wavelength were fabricated on these substrates and showed good temperature stability of output power as predicted.
  • Keywords
    III-V semiconductors; crystal growth; crystal growth from solution; gallium arsenide; indium compounds; optical fabrication; semiconductor growth; semiconductor lasers; thermal stability; InGaAs -Surface; InGaAs single crystals growth; laser diodes fabrication; temperature stability; traveling liquidus-zone method; wavelength 1.3 μm; Crystals; Diode lasers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Laser stability; Optical device fabrication; Power generation; Solids; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
  • Conference_Location
    Matsue
  • ISSN
    1092-8669
  • Print_ISBN
    1-4244-0874-1
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2007.381192
  • Filename
    4265949
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2978591