DocumentCode
2978630
Title
GaInNAs Lattice-Matched to GaAs for Photodiodes
Author
Ng, J.S. ; Soong, W.M. ; Steer, M.J. ; Hopkinson, M. ; David, J.P.R. ; Chamings, J. ; Adams, A.R. ; Sweeney, S.J. ; Allam, J.
Author_Institution
Univ. of Sheffield, Sheffield
fYear
2007
fDate
14-18 May 2007
Firstpage
347
Lastpage
349
Abstract
We present optical and electrical characterization data obtained from bulk GalnNAs (lattice-matched to GaAs) diodes with varying GalnNAs composition. Good lattice-matching to GaAs, low reverse dark current and long wavelength absorption were achieved simultaneously, without the aid of post-growth annealing and use of antimony during the growth.
Keywords
III-V semiconductors; gallium compounds; indium compounds; photodiodes; GaAs; GaInNAs; electrical characterization; optical characterization; photodiodes; post-growth annealing; Annealing; Crystalline materials; Dark current; Gallium arsenide; Lattices; Nitrogen; P-i-n diodes; Photodiodes; Photoluminescence; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381194
Filename
4265951
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