Multilayer solar cell with thin polycrystalline silicon layers

Author

Wagner, S. ; Otto, Th

Author_Institution

Dept. of Electrotech., Tech. Univ. Chemnitz, Germany

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1667

Abstract

A solar cell concept is presented which uses the internal structure of polycrystalline silicon for separation of photon generated electron-hole-pairs if horizontal fields generated by grain boundary charges and vertical fields caused by oxide layer charges are superimposed in an efficient manner. Polycrystalline silicon produced by LPCVD has properties necessary for texture and stability. By optimised layer thickness and arrangement the multiple reflection can be used for high rate absorption

Keywords

CVD coatings; electron-hole recombination; elemental semiconductors; grain boundaries; semiconductor materials; semiconductor thin films; silicon; solar cells; LPCVD Si layers; Si; electron-hole-pairs separation; grain boundary charges; high rate absorption; multilayer solar cell; multiple reflection; optimised layer thickness; oxide layer charges; photon generated electron-hole-pairs; stability; texture; thin film polycrystalline Si solar cell; vertical fields; Absorption; Charge carriers; Doping; Grain boundaries; Nonhomogeneous media; Photovoltaic cells; Silicon; Solar power generation; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520539

Filename

520539