Wide Temperature Range Operation at 43Gbit/s of 1.55μm InGaAlAs Electroabsorption Modulated Laser with Single Active Layer

Author

Garreau, A. ; Cuisin, M.-C. ; Provost, J.-G. ; Jorge, F. ; Konczykowska, A. ; Jany, C. ; Decobert, J. ; Drisse, O. ; Blache, F. ; Carpentier, D. ; Derouin, E. ; Martin, F. ; Lagay, N. ; Landreau, J. ; Kazmierski, C.

Author_Institution

Alcatel-Thales III-V Lab., Nozay

fYear

2007

fDate

14-18 May 2007

Firstpage

358

Lastpage

360

Abstract

New self thermal compensated Single Active Layer AlGalnAs EML demonstrates 43 Gb/s open-eye operation for temperatures ranging between 10°C and 70°C. The dynamic extinction ratio over the whole temperature range was above 10 dB.

Keywords

III-V semiconductors; compensation; electro-optical modulation; electroabsorption; extinction coefficients; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; InGaAlAs; InGaAlAs - Interface; bit rate 43 Gbit/s; dynamic extinction ratio; electroabsorption modulated laser; self thermal compensation; single active layer; temperature 10 C to 70 C; wavelength 1.55 μm; Bandwidth; Epitaxial growth; Extinction ratio; Laser stability; Optical materials; Power lasers; Semiconductor materials; Semiconductor optical amplifiers; Temperature dependence; Temperature distribution; 40Gbit/s; AlGaInAs; Electroabsorption Modulated Laser; Electroabsorption Modulator;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0874-1

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381197

Filename

4265954