Title :
InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft > 750GHz
Author :
Feng, M. ; Snodgrass, Williams
Author_Institution :
Illinois Univ., Urbana
Abstract :
InP HBTs have been considered over GaAs HBTs as one of the most promising technology to realize ultra wideband applications due to its wide bandwidth, lower 1/f noise, and high current driving capability, good linearity and good uniformity of threshold voltage distribution for mixed signal circuit applications. Since the report of SiGe HBT with Ft> 350 GHz by IBM in 2002, InP HBT has achieved record performance with Ft > 380 GHz in 2003.
Keywords :
1/f noise; III-V semiconductors; heterojunction bipolar transistors; indium compounds; submillimetre wave transistors; 1/f noise; InP; Kirk effect; current driving; pseudormorphic heterojunction bipolar transistor; threshold voltage distribution; Bandwidth; Circuit noise; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Linearity; Silicon germanium; Threshold voltage; Ultra wideband technology;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381208
