• DocumentCode
    2978875
  • Title

    High Yield Transferred Substrate InP DHBT

  • Author

    Kraemer, T. ; Lenk, F. ; Maassdorf, A. ; Wuerfl, H.J. ; Traenkle, G.

  • Author_Institution
    Ferdinand-Braun-Inst. fuer Hoechstfrequenztech., Berlin
  • fYear
    2007
  • fDate
    14-18 May 2007
  • Firstpage
    407
  • Lastpage
    408
  • Abstract
    A transferred substrate InP DHBT of 0.8 mum emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an average of ft = 300 GHz plusmn 3%SD, fmax = 250 GHz plusmn 5%SD at a breakdown voltage of BVceo = 6 V.
  • Keywords
    heterojunction bipolar transistors; indium compounds; substrates; DHBT; InP-interface; breakdown voltage; double heterojunction bipolar transistors; high yield transferred substrate; homogeneous device characteristics; size 0.8 mum; voltage 6 V; Conference proceedings; Cutoff frequency; Double heterojunction bipolar transistors; Epitaxial layers; Indium phosphide; Parasitic capacitance; Substrates; Thermal conductivity; Thermal expansion; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
  • Conference_Location
    Matsue
  • ISSN
    1092-8669
  • Print_ISBN
    1-4244-0875-X
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2007.381210
  • Filename
    4265967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2978875