DocumentCode
2978936
Title
Strained In1-x, GaxP/GaAsSb DHBT
Author
Hillier, G. ; Navaratnarajah, R. ; Dzankovic, A. ; Du, G. ; Tatavarti, R. ; Pan, N.
Author_Institution
MicroLink Devices, Niles
fYear
2007
fDate
14-18 May 2007
Firstpage
417
Lastpage
419
Abstract
InP/GaAsSb DHBT typically show a lower dc current gain to base sheet ratio in comparison to conventional InP/InGaAs DHBT, which limits the efficiency performance of InP/GaAsSb DHBT. A significant improvement in the dc current gain to base sheet ratio was achieved by inserting a pseudomorphic InGaP emitter spacer layer.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; InGaP-GaAsSb; W-band power amplifiers; base sheet ratio; current density; dc current gain; double heterojunction bipolar transistor; emitter spacer; Conference proceedings; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MMICs; Performance gain; Space technology; Substrates; Temperature measurement; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381213
Filename
4265970
Link To Document