Title :
High Single Mode Power Wafer Fused InAlGaAs/InP -AlGaAs/GaAs VCSELs Emitting in the 1.3-1.6μm Wavelength Range
Author :
Mereuta, A. ; Iakovlev, V. ; Caliman, A. ; Royo, P. ; Mircea, A. ; Rudra, A. ; Suruceanu, G. ; Syrbu, A. ; Kapon, E.
Author_Institution :
Ecole Polytech. Fed. de Lausanne, Lausanne
Abstract :
We demonstrate double wafer-fused 1.3 and 1.5 μm VCSELs showing record high single mode power up to 75°C, as well as polarization stability, modulation speed up to 10 Gb/s, and accurate wavelength selection capabilities.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; laser stability; optical materials; optical modulation; semiconductor lasers; surface emitting lasers; InAlGaAs-InP-AlGaAs-GaAs - Interface; VCSEL; high single-mode power wafer; laser modulation; laser wavelength selection; polarization stability; wavelength 1.3 μm to 1.6 μm; Aluminum; Fiber lasers; Gallium arsenide; Indium phosphide; Laser modes; Optical fiber polarization; Optical surface waves; Stimulated emission; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0874-1
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381216
