DocumentCode
2979019
Title
30-GBPs Transmission Over 100 M-MMFs (GI32) Using 1.1 μM-Range VCSELs and Receivers
Author
Fukatsu, K. ; Shiba, K. ; Suzuki, Y. ; Suzuki, N. ; Hatakeyama, H. ; Anan, T. ; Yashiki, K. ; Tsuji, M.
Author_Institution
NEC Corp., Otsu
fYear
2007
fDate
14-18 May 2007
Firstpage
434
Lastpage
437
Abstract
We demonstrate 30-Gb/s transmission using 1.1 μm-range VCSELs based on InGaAs/GaAs quantum wells, back-illuminated InGaAs PDs, and TIAs (InP-HBT). Error-free 30-Gbps transmission with 100 m-MMFs (GI32) is achieved for the first time.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; receivers; surface emitting lasers; HBT; InGaAs-GaAs; InP; VCSEL; bit rate 30 Gbit/s; photodiodes; quantum wells; receivers; transimpedance amplifiers; wavelength 1.1 μm; Distributed Bragg reflectors; Gallium arsenide; Indium gallium arsenide; Indium phosphide; National electric code; Optical interconnections; Parasitic capacitance; Thermal resistance; Throughput; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0874-1
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381217
Filename
4265974
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