• DocumentCode
    2979032
  • Title

    Polarization of single InGaAs quantum dots in photonic crystal nanocavities

  • Author

    Chen, W.-Y. ; Chang, H.-S. ; Hsieh, T.-P. ; Chyi, J.-I. ; Hsu, T.M.

  • Author_Institution
    Nat. Central Univ., Jhong-Li
  • fYear
    2007
  • fDate
    14-18 May 2007
  • Firstpage
    438
  • Lastpage
    440
  • Abstract
    Polarizations of light emissions from single In0.5Ga0.5As quantum dots (QDs) in photonic crystal (PC) nanocavities were studied. It is found that an individual dot could excite different polarization direction when placed in the PC nanocavity with doubly degenerated cavity modes. On the contrary, a deterministic polarization state of QD emission is found when coupled to a single-mode PC nanocavity.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; light polarisation; nanostructured materials; photonic crystals; semiconductor quantum dots; InGaAs; deterministic polarization state; doubly degenerated cavity modes; light emission polarization; photonic crystal nanocavities; single quantum dots polarization; single-mode PC nanocavity; Biomembranes; Cryptography; Crystalline materials; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Optical polarization; Photonic crystals; Quantum dots; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
  • Conference_Location
    Matsue
  • ISSN
    1092-8669
  • Print_ISBN
    1-4244-0875-X
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2007.381218
  • Filename
    4265975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2979032