DocumentCode
2979063
Title
Photoluminescence spectroscopy investigations of Si-doped InP nanowires fabricated by selective-area metalorganic vapor phase epitaxy
Author
Ding, Ying ; Motohisa, Junichi ; Fukui, Takashi
Author_Institution
Hokkaido Univ., Sapporo
fYear
2007
fDate
14-18 May 2007
Firstpage
443
Lastpage
444
Abstract
Si-doped InP NWs were successfully fabricated by SA-MOVPE. PL measurements were carried out on Si-doped InP NWs. From the PL peak position caused by band-filling effect, we estimated the electron concentration in Si-doped InP NWs.
Keywords
III-V semiconductors; MOCVD; indium compounds; nanowires; photoluminescence; silicon; vapour phase epitaxial growth; InP:Si; PL measurements; SA-MOVPE; Si-doped InP NW; Si-doped InP nanowires; electron concentration; photoluminescence spectroscopy; selective-area metalorganic vapor phase epitaxy; Doping; Epitaxial growth; Fabrication; Indium phosphide; Laser excitation; Nanowires; Photoluminescence; Scanning electron microscopy; Spectroscopy; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381220
Filename
4265977
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