Title :
GaxIn1-xAs thermophotovoltaic converters
Author :
Wanlass, M.W. ; Ward, J.S. ; Emery, K.A. ; Coutts, T.J.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
Preliminary research into the development of single-junction Ga xIn1-xAs thermophotovoltaic (TPV) power converters is reviewed. The devices structures are grown epitaxially on single-crystal InP substrates. Converter band gaps of 0.50 -0.74 eV have been considered in accordance with modeling calculations. A 1-sun, AMO efficiency of 12.8% is reported for a lattice-matched, 0.74-eV converter. Converters with lower band gaps are fabricated using lattice-mismatched, compositionally graded structures. Functional TPV converters with good performance characteristics have been demonstrated for band gaps as low as 0.5 eV
Keywords :
energy gap; gallium compounds; indium compounds; photovoltaic cells; semiconductor device models; semiconductor device testing; solar cells; substrates; 0.5 to 0.74 eV; 12.8 percent; GaxIn1-xAs thermophotovoltaic converters; GaInAs; InP; band gaps; compositionally graded structures; development; lattice-mismatch; modeling calculations; performance characteristics; power converters; research; single-crystal substrates; Indium phosphide; Narrowband; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Plasma temperature; Power system modeling; Solar power generation; Stimulated emission; Substrates;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520542
