DocumentCode
2979194
Title
MOVPE Growth of Height Controlled and Directly Connected InAs Columnar Quantum Dots
Author
Uetake, Ayahito ; Akiyama, Tomoyuki ; Kawaguchi, Kenichi ; Ebe, Hiroji ; Ekawa, Mitsuru ; Sugawara, Mitsuru ; Arakawa, Yasuhiko
Author_Institution
Fujitsu Labs. Ltd., Kawasaki
fYear
2007
fDate
14-18 May 2007
Firstpage
470
Lastpage
473
Abstract
We developed MOVPE growth of height-controlled InAs columnar QDs with an improved TM-mode sensitivity on InP(011) substrate by directly stacking SK-mode QDs whose tops were planarized under hydrogen ambient annealing to make each QD a uniform height.
Keywords
III-V semiconductors; annealing; indium compounds; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; InAs; InP; MOVPE growth; TM-mode sensitivity; directly stacking SK-mode QD; height-controlled columnar semiconductor quantum dot; hydrogen ambient annealing; Annealing; Capacitive sensors; Epitaxial growth; Epitaxial layers; Hydrogen; Indium phosphide; Planarization; Quantum dots; Stacking; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381228
Filename
4265985
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