80 Â°C CW Operation of GaInAsP/InP Membrane BH-DFB Laser with Air-Bridge Structure

Author

Naitoh, Hideyuki ; Sakamoto, Shinichi ; Ohtake, Mamoru ; Okumura, Tadashi ; Maruyama, Takeo ; Nishiyama, Nobuhiko ; Arai, Shigehisa

Author_Institution

Tokyo Inst. of Technol., Tokyo

fYear

2007

fDate

14-18 May 2007

Firstpage

476

Lastpage

479

Abstract

Membrane BH-DFB lasers emitting in 1500-1600 nm wavelength are realized with an air-bridge structure, and continuous wave operations up to moderately high temperature (80degC) were achieved under an optical pumping. The thermal resistance was estimated to be 11 K/mW, which is half that of membrane BH-DFB lasers fabricated by bonding on BCB coated InP substrate.

Keywords

III-V semiconductors; distributed feedback lasers; gallium compounds; indium compounds; laser beams; optical pumping; semiconductor lasers; thermal resistance; BCB coated InP substrate; GaInAsP-InP; InP; air-bridge structure; continuous wave laser operation; membrane BH-DFB laser fabrication; optical pumping; temperature 80 C; thermal resistance; wavelength 1500 nm to 1600 nm; Biomembranes; Distributed feedback devices; Indium phosphide; Laser feedback; Laser stability; Optical device fabrication; Optical pumping; Power lasers; Pump lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381230

Filename

4265987