Title :
Impact of Interface Formation on Intersubband Transitions in MBE GaInAs:Si/AlAsSb Multiple Coupled DQWs
Author :
Biermann, Klaus ; Kuenzel, Harald ; Tribuzy, Christiana Villas-Boas ; Ohser, Sabine ; Schneider, Harald ; Helm, Manfred
Author_Institution :
Fraunhofer Inst. for Telecommun., Berlin
Abstract :
The impact of indium segregation and diffusion of antimony on intersubband transition (IST) wavelengths in AlAsSb/GalnAs multiple quantum well (MQW) and double quantum well (DQW) structures has been evaluated. By means of 8-band k-p calculations the effect of non-abrupt interfaces on IST wavelengths in such structures is elucidated. Comparison of measured and calculated absorption spectra reveals the sacrificial character of AlAs interfacial layers for diffused or segregated atoms and allows for estimating the limits of the intersubband approach as regards short wavelength relaxation transitions.
Keywords :
III-V semiconductors; antimony; gallium compounds; molecular beam epitaxial growth; semiconductor quantum wells; spectra; GaInAs:Si-AlAsSb; MBE; absorption spectra; antimony; diffusion; double quantum well; indium segregation; interface formation; interfacial layers; intersubband transition wavelengths; multiple quantum well; short wavelength relaxation transitions; Atomic measurements; Conducting materials; Dispersion; Electromagnetic wave absorption; Epitaxial layers; Infrared spectra; Optical fiber communication; Optical materials; Quantum well devices; Temperature control;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381237
