Title :
Si-implanted GaAs Metal-semiconductor Field-effect Transistors With InGap Surface Passivation Film
Author :
Hyuga, Fumiaki ; Aoki, Tatsuo ; Asai, Kazuyoshi ; Imamura, Yoshihiro
Author_Institution :
NTT LSI Laboratories and NTT Opto-Electronics Laboratories
Keywords :
FETs; Gallium arsenide; Integrated circuit measurements; Laboratories; MESFETs; Passivation; Photonic band gap; Schottky barriers; Transconductance; Voltage;
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
DOI :
10.1109/DRC.1992.671867
