Title :
Improved Temperature Dependences of GaInAsP/InP DFB Lasers with Wirelike Active Regions by Bragg Wavelength Detuning
Author :
Nishimoto, Yutaka ; Plumwongrot, Dhanorm ; Ullah, Saeed Mahmud ; Tamura, Yosuke ; Kurokawa, Munetaka ; Maruyama, Takeo ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Tokyo Inst. of Technol, Tokyo
Abstract :
By adopting Bragg wavelength detuning into DFB lasers with wirelike active regions, the changes of threshold current densities and differential quantum efficiencies as low as plusmn19% and 24%, respectively, were obtained between 10degC and 85degC.
Keywords :
III-V semiconductors; current density; distributed feedback lasers; gallium compounds; indium compounds; laser tuning; semiconductor lasers; Bragg wavelength detuning; DFB lasers; GaInAsP-InP; differential quantum efficiencies; temperature 10 C to 85 C; threshold current densities; wirelike active regions; Distributed Bragg reflectors; Distributed feedback devices; Indium phosphide; Laser feedback; Quantum well lasers; Surface emitting lasers; Temperature dependence; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381241
