Title :
Systematic Study of the Effects of Modulation P-Doping on 1.3μM InAs/GaAs Dot-in-Well Lasers
Author :
Alexander, R.R. ; Childs, D. ; Agarwal, Harshit ; Groom, K.M. ; Liu, H.Y. ; Hopkinson, Mark ; Hogg, R.A.
Author_Institution :
Univ. of Sheffield, Sheffield
Abstract :
We report a systematic study of modulation p-doping effects on QD lasers performance, we discuss the role of p-doping in: threshold current, gain and loss; gain profile; temperature sensitivity and modulation bandwidth.
Keywords :
gallium arsenide; indium compounds; quantum dot lasers; semiconductor doping; InAs-GaAs; dot-in-well laser; modulation bandwidth; modulation p-doping; quantum dot laser performance; temperature sensitivity; wavelength 1.3 micron; Conference proceedings; Doping; Gallium arsenide; Optical scattering; Performance gain; Quantum dot lasers; Stationary state; Temperature dependence; Temperature sensors; Threshold current;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0874-1
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381242
