Beyond refractive optical lithography next generation lithography “What´s after 193 nm?”

Author

Seidel, Phil ; Canning, John ; Mackay, Scott

Author_Institution

SEMATECH, Austin, TX, USA

fYear

1997

fDate

13-15 Oct 1997

Firstpage

334

Lastpage

341

Abstract

The integrated circuit industry growth will continue to rely on microlithography as a key enabler to drive chip productivity. Current optical lithography methods (i.e. 193 nm) have been projected to have resolving power down to 130 nm CD generation nodes. Beyond this capability there is a strong consensus that a “Next Generation Lithography” (NGL) technology will be needed to continue along SIA Roadmap timelines. Many NGL technologies are candidates for sub-130 nm CD manufacturing. Choosing the technology path with partial data and limited resources by YE 1997 to meet 130 nm/2003 and 100 nm/2007 generation nodes will require a consensus (international) decision process methodology

Keywords

integrated circuit technology; lithography; technological forecasting; 130 nm; 193 nm; SIA Roadmap; consensus international decision process methodology; critical dimension; integrated circuit manufacturing; microlithography; next generation lithography; refractive optical lithography; Acceleration; Costs; Image resolution; Lithography; Manufacturing; Optical refraction; Production; Productivity; Resists; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Manufacturing Technology Symposium, 1997., Twenty-First IEEE/CPMT International

Conference_Location

Austin, TX

ISSN

1089-8190

Print_ISBN

0-7803-3929-0

Type

conf

DOI

10.1109/IEMT.1997.626940

Filename

626940