• DocumentCode
    2979532
  • Title

    Quantum Dots with Perfectly Resonant Emission Energies

  • Author

    Rastelli, Armando ; Wang, Lijuan ; Kiravittaya, Suwit ; Schmidt, Oliver

  • Author_Institution
    Max-Planck-Inst. fur Festkorperforschung, Stuttgart
  • fYear
    2007
  • fDate
    14-18 May 2007
  • Firstpage
    546
  • Lastpage
    550
  • Abstract
    Semiconductor quantum dots (QDs) with excellent structural, optical and electronic properties can be easily fabricated by the self-assembled Stranski-Krastanow growth mode. However, in spite of numerous efforts and encouraging results, it has become clear that the bottom-up approach alone can not yield QDs with deterministically controllable electronic properties. Post-growth processing seems at present the only viable path to achieve this goal. Here we employ a focused laser beam both to characterize and to in-situ process single self-assembled QDs by heating them from cryogenic to high temperatures. The heat treatment allows us to blue-shift, in a broad range and with resolution-limited accuracy, the quantized energy levels of charge carriers confined in single QDs. We demonstrate the approach by bringing spatially separated QDs in mutual resonance. This processing method may open the way to a full control of nanostructures at the quantum level.
  • Keywords
    heat treatment; laser materials processing; nanostructured materials; nanotechnology; self-assembly; semiconductor quantum dots; blue-shift; bottom-up approach; charge carriers; cryogenic heating; electronic properties; focused laser beam; heat treatment; nanostructures; optical properties; perfectly resonant emission energies; post-growth processing; quantized energy levels; resolution-limited accuracy; self-assembled Stranski-Krastanow growth mode; semiconductor quantum dots; Cryogenics; Energy resolution; Heat treatment; Heating; Laser beams; Laser modes; Quantum dots; Resonance; Stimulated emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
  • Conference_Location
    Matsue
  • ISSN
    1092-8669
  • Print_ISBN
    1-4244-0875-X
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2007.381249
  • Filename
    4266006