DocumentCode
2979532
Title
Quantum Dots with Perfectly Resonant Emission Energies
Author
Rastelli, Armando ; Wang, Lijuan ; Kiravittaya, Suwit ; Schmidt, Oliver
Author_Institution
Max-Planck-Inst. fur Festkorperforschung, Stuttgart
fYear
2007
fDate
14-18 May 2007
Firstpage
546
Lastpage
550
Abstract
Semiconductor quantum dots (QDs) with excellent structural, optical and electronic properties can be easily fabricated by the self-assembled Stranski-Krastanow growth mode. However, in spite of numerous efforts and encouraging results, it has become clear that the bottom-up approach alone can not yield QDs with deterministically controllable electronic properties. Post-growth processing seems at present the only viable path to achieve this goal. Here we employ a focused laser beam both to characterize and to in-situ process single self-assembled QDs by heating them from cryogenic to high temperatures. The heat treatment allows us to blue-shift, in a broad range and with resolution-limited accuracy, the quantized energy levels of charge carriers confined in single QDs. We demonstrate the approach by bringing spatially separated QDs in mutual resonance. This processing method may open the way to a full control of nanostructures at the quantum level.
Keywords
heat treatment; laser materials processing; nanostructured materials; nanotechnology; self-assembly; semiconductor quantum dots; blue-shift; bottom-up approach; charge carriers; cryogenic heating; electronic properties; focused laser beam; heat treatment; nanostructures; optical properties; perfectly resonant emission energies; post-growth processing; quantized energy levels; resolution-limited accuracy; self-assembled Stranski-Krastanow growth mode; semiconductor quantum dots; Cryogenics; Energy resolution; Heat treatment; Heating; Laser beams; Laser modes; Quantum dots; Resonance; Stimulated emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381249
Filename
4266006
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