مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

2979540

Title :

Gate Current In Complementary HFETs

Author :

Schuermeyer, F. ; Martinez, E. ; Shur, M. ; Grider, D.

Author_Institution :

University of Virginia

fYear :

1992

fDate :

21-24 June 1992

Keywords :

Circuit simulation; Doping; FETs; HEMTs; Leakage current; MODFETs; Power dissipation; Silicon compounds; Thermionic emission; Voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Device Research Conference, 1992. Digest. 50th Annual

Conference_Location :

Cambridge, MA, USA

Type :

conf

DOI :

10.1109/DRC.1992.671868

Filename :

671868

Link To Document :