DocumentCode
2979597
Title
Temperature Dependence of Gain Characteristics in P-Doped 1.3-μm Quantum Dot Lasers
Author
Yukutake, Tetsutaro ; Ishida, Mitsuru ; Hatori, Nobuaki ; Sudo, Hisao ; Yamamoto, Tsuyoshi ; Nakata, Yoshiaki ; Ebe, Hiroji ; Sugawara, Mitsuru ; Arakawa, Yasuhiko
Author_Institution
Univ. of Tokyo, Tokyo
fYear
2007
fDate
14-18 May 2007
Firstpage
563
Lastpage
566
Abstract
We report the measured temperature dependence of gain characteristics in p-doped 1.3-μm quantum-dot lasers and indicate the relationship between their temperature-stability around room temperature and behavior of holes at the ground-state supplied by p-doping.
Keywords
laser stability; quantum dot lasers; thermal stability; gain characteristics; p-doped quantum dot lasers; temperature 293 K to 298 K; temperature dependence; temperature-stability; wavelength 1.3 μm; Gain measurement; Land surface temperature; Laser theory; Quantum dot lasers; Quantum dots; Temperature dependence; Temperature distribution; Temperature measurement; Threshold current; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0874-1
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381253
Filename
4266010
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