Title :
Multidirectional Transmission Electron Microscope Observation of a Single InAs/GaAs Self-Assembled Quantum Dot
Author :
Inoue, T. ; Kita, T. ; Wada, O. ; Konno, M. ; Yaguchi, T. ; Kamino, T.
Author_Institution :
Kobe Univ., Kobe
Abstract :
We succeeded in observing atomic scale images of undamaged single InAs quantum dots (QDs) embedded in a GaAs matrix using a combined use of high resolution transmission electron microscope (HRTEM) and focused ion beam (FIB) system for the first time. The QD can be viewed from multi directions, and a conclusive and comprehensive interpretation of the size and shape anisotropy has been achieved. Asymmetry of the structural properties has been confirmed between the [110] and [-110] crystallographic directions. The embedded QD is elongated along the [-110] axis. The strain-field pattern is also asymmetric according to the shape anisotropy Our results will enable the investigation of exact structural anisotropy and their influence on the atom like properties of QDs.
Keywords :
focused ion beam technology; gallium arsenide; indium compounds; semiconductor quantum dots; transmission electron microscopy; GaAs matrix; InAs quantum dot; InAs-GaAs; focused ion beam system; high resolution transmission electron microscope; multidirectional transmission electron microscope observation; self-assembled quantum dot; shape anisotropy; strain-field pattern; Anisotropic magnetoresistance; Atomic beams; Electron beams; Focusing; Gallium arsenide; Image resolution; Ion beams; Quantum dots; Shape; Transmission electron microscopy;
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2007.381255
