• DocumentCode
    2979672
  • Title

    Design, fabrication, and testing of a novel planar Schottky barrier diode for millimeter and submillimeter wavelengths

  • Author

    Garfield, Diane G. ; Mattauch, Robert J. ; Bishop, William L.

  • Author_Institution
    Semicond. Device Lab., Virginia Univ., Charlottesville, VA, USA
  • fYear
    1988
  • fDate
    11-13 Apr 1988
  • Firstpage
    154
  • Lastpage
    160
  • Abstract
    A whiskerless diode has been developed for operation at 100 GHz. It uses an etched surface channel to minimize parasitic capacitance and simplify fabrication. The diode is mechanically rugged and suitable for high-vibration and cryogenic operation. DC I-V characteristics are comparable to the highest-quality whisker-contacted devices. An overview of device design, performance, and fabrication is presented
  • Keywords
    Schottky-barrier diodes; solid-state microwave devices; 100 GHz; MM wavelength; cryogenic operation; design; etched surface channel; fabrication; parasitic capacitance; planar Schottky barrier diode; submillimeter wavelengths; testing; whiskerless diode; Anodes; Capacitance; Fabrication; Fingers; Frequency; Gallium arsenide; Schottky barriers; Schottky diodes; Semiconductor diodes; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Southeastcon '88., IEEE Conference Proceedings
  • Conference_Location
    Knoxville, TN
  • Type

    conf

  • DOI
    10.1109/SECON.1988.194834
  • Filename
    194834
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2979672