Title :
Design, fabrication, and testing of a novel planar Schottky barrier diode for millimeter and submillimeter wavelengths
Author :
Garfield, Diane G. ; Mattauch, Robert J. ; Bishop, William L.
Author_Institution :
Semicond. Device Lab., Virginia Univ., Charlottesville, VA, USA
Abstract :
A whiskerless diode has been developed for operation at 100 GHz. It uses an etched surface channel to minimize parasitic capacitance and simplify fabrication. The diode is mechanically rugged and suitable for high-vibration and cryogenic operation. DC I-V characteristics are comparable to the highest-quality whisker-contacted devices. An overview of device design, performance, and fabrication is presented
Keywords :
Schottky-barrier diodes; solid-state microwave devices; 100 GHz; MM wavelength; cryogenic operation; design; etched surface channel; fabrication; parasitic capacitance; planar Schottky barrier diode; submillimeter wavelengths; testing; whiskerless diode; Anodes; Capacitance; Fabrication; Fingers; Frequency; Gallium arsenide; Schottky barriers; Schottky diodes; Semiconductor diodes; Testing;
Conference_Titel :
Southeastcon '88., IEEE Conference Proceedings
Conference_Location :
Knoxville, TN
DOI :
10.1109/SECON.1988.194834
