DocumentCode
2979673
Title
Photomasks for advanced lithography
Author
Smith, Wayne ; Tybula, W.
Author_Institution
SEMATECH, Austin, TX, USA
fYear
1997
fDate
13-15 Oct 1997
Firstpage
342
Lastpage
345
Abstract
The mask in lithography is the heart of the resulting image on the semiconductor wafer. The mask defines the image to be transferred to the wafer. The evolution of semiconductor manufacturing has seen masks improve from contact devices, that were good for a few pattern transfers, to projection/reduction masks that can be employed for tens of thousands of transfers. As the shrinking of the device dimensions continues, the challenges of obtaining the required quality mask images increases. Optical Proximity Correction (OPC) and Phase Shift Masks (PSM) are increasing the complexity of the masks and producing finer images. As the Next Generation lithography evolves, additional challenges will face the mask manufacturing professional. This paper is an overview of the requirements for the various types of masks
Keywords
masks; phase shifting masks; photolithography; proximity effect (lithography); contact device; mask manufacturing; next generation lithography; optical proximity correction; pattern transfer; phase shift mask; photomask; projection/reduction mask; semiconductor manufacturing; wafer image; Cleaning; Electronics industry; Etching; Glass; Heart; Lithography; Manufacturing; Optical imaging; Protection; Semiconductor device manufacture;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Manufacturing Technology Symposium, 1997., Twenty-First IEEE/CPMT International
Conference_Location
Austin, TX
ISSN
1089-8190
Print_ISBN
0-7803-3929-0
Type
conf
DOI
10.1109/IEMT.1997.626941
Filename
626941
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