A study of the nature and characteristics of light radiation in reverse-biased silicon junctions

Author

Williams, C.B. ; Daneshvar, K.

Author_Institution

Dept. of Electr. Eng., North Carolina Univ., Charlotte, NC, USA

fYear

1988

fDate

11-13 Apr 1988

Firstpage

161

Lastpage

164

Abstract

Luminescence on the order of 0.01 W/cm² is emitted in high electric field regions of the junction in reverse-biased silicon. The results of a study that sought to investigate the optical emission and to yield a probable emission mechanism are presented. The device characteristics, such as current-voltage, intensity-voltage, radiation spectra, and crystal defects, associated with the light emission from junctions of various geometry and orientation were studied. Special effort was taken to find an association between light-emitting regions and crystal defect sites

Keywords

defect electron energy states; elemental semiconductors; luminescence of inorganic solids; p-n junctions; silicon; Si; crystal defects; current-voltage; device characteristics; high electric field; intensity-voltage; light radiation; light-emitting regions; luminescence; optical emission; p-n junctions; radiation spectra; reverse-biased silicon junctions; Avalanche breakdown; Breakdown voltage; Electric breakdown; Geometrical optics; Luminescence; Optical devices; Optical filters; Optical sensors; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '88., IEEE Conference Proceedings

Conference_Location

Knoxville, TN

Type

conf

DOI

10.1109/SECON.1988.194835

Filename

194835