A new physics-based circuit model for 4H-SiC power diodes implemented in SABER

Author

Kolessar, R. ; Nee, H.P.

Author_Institution

Dept. of Electr. Eng., Electr. Machines & Power Electron., R. Inst. of Technol., Stockholm, Sweden

Volume

2

fYear

2001

fDate

2001

Firstpage

989

Abstract

A circuit-oriented model for 4H-SiC power diodes is presented. The modeling technique used in this work was previously applied to a silicon (Si) power diode model for both turn-on and turn-off transients, and presents a good trade-off between accuracy and speed. The model is physics-based, but includes judicious approximations for fast calculation, and includes up-to-date physical models for silicon carbide, with temperature dependence. The proposed model is practically implemented in the circuit simulator SABER, using the MAST modeling language. Model performances are compared to measurements on 2.5 kV 400 A Si IGBT/SiC diode modules from ABB at various input currents

Keywords

electronic engineering computing; hydrogen; power engineering computing; power semiconductor diodes; power semiconductor switches; semiconductor device models; silicon compounds; 2.5 kV; 400 A; 4H-SiC power diodes; MAST modeling language; SABER; SiC; approximations; computer simulation; physics-based circuit model; turn-off transients; turn-on transients; Anodes; Cathodes; Charge carrier processes; Circuit simulation; Current density; Diodes; Energy states; Power electronics; Power system modeling; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2001. APEC 2001. Sixteenth Annual IEEE

Conference_Location

Anaheim, CA

Print_ISBN

0-7803-6618-2

Type

conf

DOI

10.1109/APEC.2001.912487

Filename

912487