Title :
SiSMA: a statistical simulator for mismatch analysis of MOS ICs
Author :
Biagetti, G. ; Orcioni, S. ; Signoracci, L. ; Turchetti, C. ; Crippa, P. ; Alessandrini, M.
Author_Institution :
Dipt. di Elettronica e Autom., Ancona Univ., Italy
Abstract :
This paper presents a simulator for the statistical analysis of MOS integrated circuits affected by mismatch effect. The tool is based on a rigorous formulation of circuit equations including random current sources to take into account technological tolerances. The simulator requires a simulation time of several orders of magnitude lower than that required by Monte Carlo analysis, while ensuring a good accuracy.
Keywords :
CMOS integrated circuits; MOS integrated circuits; circuit simulation; differential equations; integrated circuit design; integrated circuit modelling; statistical analysis; stochastic processes; MOS IC; MOS integrated circuits; Monte Carlo analysis; SiSMA statistical simulator; circuit equations; mismatch analysis; random current sources; simulation time; stochastic differential equations; stochastic simulation; technological tolerances; Analytical models; Circuit simulation; Covariance matrix; Differential equations; Integrated circuit technology; MOSFETs; Predictive models; Production; Statistical analysis; Stochastic processes;
Conference_Titel :
Computer Aided Design, 2002. ICCAD 2002. IEEE/ACM International Conference on
Print_ISBN :
0-7803-7607-2
DOI :
10.1109/ICCAD.2002.1167577
