DocumentCode
2979959
Title
Proton irradiation effects on InAs / InP quantum dash laser diodes emitting at 1.55 µm
Author
Boutillier, M. ; Gauthier-Lafaye, O. ; Bonnefont, S. ; Lelarge, F. ; Dagens, B. ; Make, D. ; Gouezigou, O. Le ; Rousseau, B. ; Accard, A. ; Poingt, F. ; Pommereau, F. ; Lozes-Dupuy, F.
Author_Institution
LAAS-CNRS, Univ. de Toulouse, Toulouse, France
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
1
Lastpage
5
Abstract
Quantum dash lasers were irradiated for the first time, using 31 MeV protons. These novel structures, which show promising performances for 1.55 mum optical communications exhibit better robustness to radiation than quantum well lasers.
Keywords
III-V semiconductors; indium compounds; laser beam effects; optical communication; quantum dash lasers; InAs-InP; laser irradiation; optical communications; proton irradiation effects; quantum dash laser diodes emitting; wavelength 1.55 mum; Diode lasers; Fiber lasers; Indium phosphide; Laser noise; Optical receivers; Protons; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Proton radiation effects; Quantum dots; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location
Deauville
ISSN
0379-6566
Print_ISBN
978-1-4244-1704-9
Type
conf
DOI
10.1109/RADECS.2007.5205462
Filename
5205462
Link To Document