• DocumentCode
    2980080
  • Title

    HfO2 CMOS Device and Circuit Reliability

  • Author

    Yuan, J.S.

  • Author_Institution
    Univ. of Central Florida, Orlando
  • fYear
    2007
  • fDate
    20-22 Dec. 2007
  • Firstpage
    63
  • Lastpage
    66
  • Abstract
    In this invited talk, HfO2 transistor channel hot electron and gate breakdown on device and circuit behaviors are presented.
  • Keywords
    CMOS integrated circuits; MOSFET; circuit reliability; electric breakdown; hafnium compounds; hot electron transistors; invertors; low noise amplifiers; oscillators; CMOS inverter; CMOS inverter pull-down delay; RF circuit performances; SPICE simulation; cascode low noise amplifier; channel hot electrons; circuit reliability; dielectrics; gate breakdown; hot electron effect; nMOSFET; noise figure; ring oscillator; transistor DC-AC parameters; Cutoff frequency; Degradation; Electrons; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Noise figure; Radio frequency; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
  • Conference_Location
    Tainan
  • Print_ISBN
    978-1-4244-0637-1
  • Electronic_ISBN
    978-1-4244-0637-1
  • Type

    conf

  • DOI
    10.1109/EDSSC.2007.4450062
  • Filename
    4450062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2980080