Characterization of advanced materials for high voltage/high temperature power electronics packaging

Author

Hopkins, Douglas C. ; Bowers, John S.

Author_Institution

Energy Syst. Inst., Buffalo Univ., Buffalo, NY, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

1062

Abstract

To achieve high reliability in next generation dense, high voltage (>1 kV DC), high temperature (200°C to 400°C) power electronic circuits, packaging techniques from higher voltage systems (5 kV-50 kV) need to be introduced. This paper describes advanced materials, measurement and characterization techniques for this class of systems. These systems are being developed for commercial, industrial and military applications that include supplies, drives and actuators. The results are applicable to 1200 V+IGBT based module designs

Keywords

interconnections; power electronics; reliability; thermal management (packaging); 1200 V; 200 to 400 C; 5 to 50 kV; actuators; advanced materials characterisation; commercial applications; drives; embedding materials; high reliability; high temperature power electronics packaging; high voltage power electronics packaging; higher voltage systems; industrial applications; interconnection materials; military applications; packaging techniques; power electronic circuits; structural materials; voltage breakdown; Defense industry; Electronics packaging; Integrated circuit interconnections; Lead; Power electronics; Power system reliability; Space vehicles; Temperature; Thermal stresses; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2001. APEC 2001. Sixteenth Annual IEEE

Conference_Location

Anaheim, CA

Print_ISBN

0-7803-6618-2

Type

conf

DOI

10.1109/APEC.2001.912498

Filename

912498