Title :
A Simple Method to Extract Source/Drain Series Resistance for Advanced MOSFETs
Author :
Chang, Y.H. ; Wu, Y.F. ; Ho, C.S.
Author_Institution :
Nat. Yunlin Univ. of Sci. & Technol., Touliu
Abstract :
In this work, we developed a simple method for determining gate-bias dependent source and drain series resistances for advanced MOSFETs. Devices with gate lengths from 0.185 mum to 0.23 mum were measured and used to verify our theoretical derivation. Our result shows that the source/drain series resistance increases slightly then decreases moderately with gate bias. Simulation shows excellent agreement with the measurement. The improved method provides better efficiency and accuracy for modeling current-voltage characteristics of MOSFETs with LDD and pocket implants.
Keywords :
MOSFET; electric resistance; electric resistance measurement; advanced MOSFET; current-voltage characteristics modeling; drain series resistance extraction; gate bias dependent source; metal-oxide-semiconductor field effect transistor; size 0.185 mum to 0.232 mum; source resistance extraction; Circuit synthesis; Current-voltage characteristics; Electrical resistance measurement; Electron mobility; Implants; Length measurement; Linear approximation; MOSFETs; Monitoring; Surface resistance;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450068
